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STTA2512P STTA5012TV1/2
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 25A 1200V 60ns 1.9V
K1 A1 K2 A1 K2 A2 A2 K1
STTA5012TV1
STTA5012TV2
FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. LOW INDUCTANCE PACKAGE < 5 nH. INSULATED PACKAGE : ISOTOPTM Electrical insulation : 2500VRMS Capacitance : < 45pF.
K
ISOTOPTM
A K
SOD93 STTA2512P
DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 s F = 5kHz square tp = 10ms sinusoidal Value 1200 50 300 210 - 65 to + 150 150 Unit V A A A C C operations. They are particularly suitable in Motor Control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes.
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
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STTA2512P / STTA5012TV1/2
THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Coupling thermal resistance Conduction power dissipation IF(AV) = 25A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) ISOTOP ISOTOP SOD93 Rth(c) P1 Pmax ISOTOP ISOTOP SOD93 ISOTOP SOD93 Coupling Tc= 70C Tc= 82C Tc= 62C Tc= 75C 62.5 W Conditions Per diode Total Value 1.4 0.75 1.2 0.1 57 C/W W Unit C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Vto Rd
Test pulses :
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms , < 2%
Test conditions IF =25A VR =0.8 x VRRM Ip < 3.IF(AV) Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.3 2.0
Max 2.1 1.9 150 8 1.52 15
Unit V V A mA V m
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 600V dIF/dt = -200 A/s dIF/dt = -500 A/s Tj = 125C VR = 600V dIF/dt = -500 A/s IF =25A 35 45 IF =25A 1.2 / Min Typ 60 110 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25C IF =25 A, dIF/dt = 200 A/s measured at 1.1 x VFmax Tj = 25C IF =25A, dIF/dt = 200 A/s IF =40A, dIF/dt = 500 A/s Min Typ Max 900 V 30 35 Unit ns
VFp
Peak forward voltage
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STTA2512P / STTA5012TV1/2
Fig. 1: Conduction losses versus average current (per diode).
P1(W) 60 50 40 30 20 10 IF(av) (A) 0 0 5 10 15 20
=tp/T
=1 = 0.1 = 0.2 = 0.5
Fig. 2: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 300
Tj=125C
100
10
T
tp
VFM(V)
30
25
1 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (ISOTOP).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
= 0.5
Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
= 0.5
0.4
= 0.2
0.4
= 0.2
0.2
= 0.1 Single pulse
0.2
= 0.1
tp(s) 1E-2 1E-1 1E+0 5E+0
0.0 1E-4
Single pulse
tp(s) 1E-2 1E-1 1E+0
0.0 1E-3
1E-3
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode).
IRM(A) 55 50 45 40 35 30 25 20 15 10 5 0
VR=600V Tj=125C IF=2*IF(av) IF=IF(av)
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode).
trr(ns) 500 450 400 350 300 250 200 150 100 50 0
VR=600V Tj=125C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
IF=0.5*IF(av)
dIF/dt(A/s)
0 100 200 300 400 500
dIF/dt(A/s)
0 100 200 300 400 500
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STTA2512P / STTA5012TV1/2
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode).
S factor 1.60
Tj=125C IF<2*IF(av) VR=600V
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C).
1.1
1.0
1.40
S factor
1.20
0.9
IRM
1.00
0.8 Tj(C)
0.80
dIF/dt(A/s)
0 100 200 300 400 500
0.7 25
50
75
100
125
Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode).
VFP(V) 60
IF=IF(av) Tj=125C
Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode).
tfr(ns) 1400 1200 1000 800 600 400
VFR=1.1*VF max. IF=IF(av) Tj=125C
50 40 30 20 10
dIF/dt(A/s)
0 0 100 200 300 400 500
200 0 100
dIF/dt(A/s)
200 300 400 500
4/9
STTA2512P / STTA5012TV1/2
APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
tp T F = 1/T = tp/T
LOAD
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STTA2512P / STTA5012TV1/2
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM tp T = tp/T
F = 1/T
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS
I IF Rd VR V IR V to VF
Conduction losses : P1 = Vto . IF(AV) + Rd . IF2(RMS) Max values at 125C,suitable for Ipeak < 3.IF(av) Reverse losses : P2 = VR . IR . (1 - )
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STTA2512P / STTA5012TV1/2
APPLICATION DATA (Cont'd) Fig. F: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x ( 3 + 2 x S ) x F 6 x dIF dt VR x IRM x IL x ( S + 2 ) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb
I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
Turn-off losses (in the diode) : P3 =
VR x IRM 2 x S x F 6 x dIF dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : (with non negligible serial inductance) P3' =
VR x IRM 2 x S x F + 6 x dIF dt L x IRM 2 x F 2
P3,P3' and P5 are suitable for power MOSFET and IGBT
Fig. G: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
7/9
STTA2512P / STTA5012TV1/2
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193
24.80 typ.
0.976 typ.
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STTA2512P / STTA5012TV1/2
PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O 4.00 3.95 31.00 4.10 0.157 18.0 4.15 0.156 1.220 0.161 10.80 14.70 0.50 1.10 1.75 11.10 0.425 15.20 0.578 12.20 16.20 0.709 0.163 Millimeters 4.70 1.17 2.50 1.27 0.78 0.020 1.30 0.043 0.069 0.437 0.598 0.480 0.638 4.90 0.185 1.37 0.046 0.098 0.050 0.031 0.051 Inches 0.193 0.054 Min. Typ. Max. Min. Typ. Max.
Ordering type STTA5012TV1 STTA5012TV2 STTA2512P
Marking STTA5012TV1 STTA5012TV2 STTA2512P
Package ISOTOP ISOTOP SOD93
Weight 27g. without screws 3.79g.
Base qty 10 10 30
Delivery mode Tube Tube Tube
Cooling method: by conduction (C) ISOTOP recommended torque value: 1.3 N.m. (MAX 1.5 N.m.) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws for terminals). ISOTOP: the screws supplied with the package are suitable for mounting on a board with a thickness of 0.6 mm min and 2.2 mm max. Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9

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